MSE1PJHM3J/89A - DIODE GEN PURP 600V 1A MICROSMP

Fabricant Nimewo Pati

MSE1PJHM3J/89A

Entèn Nimewo Pati

AX-MSE1PJHM3J/89A

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 600V 1A MICROSMP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4922170 Pieces

referans pri

~~USD 0.057~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MSE1PJHM3J/89A nan stock pou vann.

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Espesifikasyon pou MSE1PJHM3J/89A

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MSE1PJHM3J/89A

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 600V 1A MICROSMP

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 780ns

Kouran - Fèy Reverse @ Vr : 1µA @ 600V

Kapasite @ Vr, F : 5pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-219AD

Pake Aparèy Founisè : MicroSMP (DO-219AD)

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MSE1 , MSE1PJH

dokiman pou MSE1PJHM3J/89A

Fich : MSE1PJHM3J/89A.pdf

pwodwi ki gen rapò pou MSE1PJHM3J/89A Vishay Semiconductor Diodes Division

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