SPD02N60S5BTMA1 - MOSFET N-CH 600V 1.8A TO-252

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 600V 1.8A TO-252
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9249 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SPD02N60S5BTMA1 nan stock pou vann.
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UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou SPD02N60S5BTMA1

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SPD02N60S5BTMA1
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 600V 1.8A TO-252
Seri : CoolMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 3 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id : 5.5V @ 80µA
Chaje Gate (Qg) (Max) @ Vgs : 9.5nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 240pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 25W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO252-3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SPD02 , SPD02N6

dokiman pou SPD02N60S5BTMA1

pwodwi ki gen rapò pou SPD02N60S5BTMA1 Infineon Technologies

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