HUF75829D3ST - MOSFET N-CH 150V 18A DPAK

Fabricant Nimewo Pati

HUF75829D3ST

Entèn Nimewo Pati

AX-HUF75829D3ST

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 150V 18A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

70495 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen HUF75829D3ST nan stock pou vann.

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Espesifikasyon pou HUF75829D3ST

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : HUF75829D3ST

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 150V 18A DPAK

Seri : UltraFET™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 150V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 110 mOhm @ 18A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 20V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1080pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 110W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252AA

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : HUF7 , HUF758

dokiman pou HUF75829D3ST

Fich : HUF75829D3ST.pdf

pwodwi ki gen rapò pou HUF75829D3ST ON Semiconductor

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