FQI4N20LTU - MOSFET N-CH 200V 3.8A I2PAK

Fabricant Nimewo Pati

FQI4N20LTU

Entèn Nimewo Pati

AX-FQI4N20LTU

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 200V 3.8A I2PAK

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

65160 Pieces

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pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou FQI4N20LTU

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQI4N20LTU

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 200V 3.8A I2PAK

Seri : QFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.8A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 1.35 Ohm @ 1.9A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.2nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 310pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.13W (Ta), 45W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK (TO-262)

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQI , FQI4N

dokiman pou FQI4N20LTU

Fich : FQI4N20LTU.pdf

pwodwi ki gen rapò pou FQI4N20LTU ON Semiconductor

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