IPI80N06S3L-08 - MOSFET N-CH 55V 80A TO-262

Fabricant Nimewo Pati

IPI80N06S3L-08

Entèn Nimewo Pati

AX-IPI80N06S3L-08

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 55V 80A TO-262

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9062 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPI80N06S3L-08 nan stock pou vann.

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Espesifikasyon pou IPI80N06S3L-08

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPI80N06S3L-08

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 55V 80A TO-262

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 7.9 mOhm @ 43A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 55µA

Chaje Gate (Qg) (Max) @ Vgs : 134nC @ 10V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 6475pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 105W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO262-3

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPI8 , IPI80N0

dokiman pou IPI80N06S3L-08

Fich : IPI80N06S3L-08.pdf

pwodwi ki gen rapò pou IPI80N06S3L-08 Infineon Technologies

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