NVD6415ANLT4G - MOSFET N-CH 100V 23A DPAK-4

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NVD6415ANLT4G

Entèn Nimewo Pati

AX-NVD6415ANLT4G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 23A DPAK-4

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Plon gratis / RoHS Konfòm

akouchman Tan

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Espesifikasyon pou NVD6415ANLT4G

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NVD6415ANLT4G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 23A DPAK-4

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 52 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1024pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 83W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NVD6 , NVD641

dokiman pou NVD6415ANLT4G

Fich : NVD6415ANLT4G.pdf

pwodwi ki gen rapò pou NVD6415ANLT4G ON Semiconductor

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