TSM170N06PQ56 RLG - MOSFET N-CH 60V 44A 8PDFN

Fabricant Nimewo Pati

TSM170N06PQ56 RLG

Entèn Nimewo Pati

AX-TSM170N06PQ56 RLG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET N-CH 60V 44A 8PDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2053600 Pieces

referans pri

~~USD 0.13662~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TSM170N06PQ56 RLG nan stock pou vann.

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Espesifikasyon pou TSM170N06PQ56 RLG

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Nimewo pati : TSM170N06PQ56 RLG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET N-CH 60V 44A 8PDFN

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 44A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 17 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1556pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 73.5W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PDFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TSM17 , TSM170N0

dokiman pou TSM170N06PQ56 RLG

Fich : TSM170N06PQ56 RLG.pdf

pwodwi ki gen rapò pou TSM170N06PQ56 RLG Taiwan Semiconductor Corporation

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