SQM100N10-10_GE3 - MOSFET N-CH 100V 100A TO-263

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 100V 100A TO-263
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
250060 Pieces
referans pri
USD 1.12197
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SQM100N10-10_GE3 nan stock pou vann.
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Espesifikasyon pou SQM100N10-10_GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SQM100N10-10_GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 100V 100A TO-263
Seri : Automotive, AEC-Q101, TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 10.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 185nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 8050pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 375W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TO-263 (D2Pak)
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SQM10 , SQM100N1

dokiman pou SQM100N10-10_GE3

pwodwi ki gen rapò pou SQM100N10-10_GE3 Vishay Siliconix

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