IXTX32P60P - MOSFET P-CH 600V 32A PLUS247

Fabricant Nimewo Pati

IXTX32P60P

Entèn Nimewo Pati

AX-IXTX32P60P

Fabricant

IXYS

Kout Deskripsyon

MOSFET P-CH 600V 32A PLUS247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

36264 Pieces

referans pri

~~USD 9.282~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXTX32P60P nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXTX32P60P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXTX32P60P

Fabricant : IXYS

Deskripsyon : MOSFET P-CH 600V 32A PLUS247

Seri : PolarP™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 32A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 350 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 196nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 11100pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 890W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PLUS247™-3

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXT , IXTX3

dokiman pou IXTX32P60P

Fich : IXTX32P60P.pdf

pwodwi ki gen rapò pou IXTX32P60P IXYS

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