TH58BYG2S3HBAI6 - IC FLASH 4G PARALLEL 67VFBGA

Fabricant Nimewo Pati

TH58BYG2S3HBAI6

Entèn Nimewo Pati

AX-TH58BYG2S3HBAI6

Fabricant

Toshiba Memory America, Inc.

Kout Deskripsyon

IC FLASH 4G PARALLEL 67VFBGA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

84395 Pieces

referans pri

~~USD 3.696~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TH58BYG2S3HBAI6 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou TH58BYG2S3HBAI6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TH58BYG2S3HBAI6

Fabricant : Toshiba Memory America, Inc.

Deskripsyon : IC FLASH 4G PARALLEL 67VFBGA

Seri : Benand™

Estati Pati : Active

Kalite memwa yo : Non-Volatile

Fòma memwa : FLASH

Teknoloji : FLASH - NAND (SLC)

Size memwa : 4Gb (512M x 8)

Frè frekans lan : -

Ekri Sik Tan - Pawòl, Page : 25ns

Tan aksè : 25ns

Entèfas memwa : Parallel

Voltage - Pwovizyon pou : 1.7V ~ 1.95V

Operating Tanperati : -40°C ~ 85°C (TA)

Mounting Kalite : Surface Mount

Pake / Ka : 67-VFBGA

Pake Aparèy Founisè : 67-VFBGA (6.5x8)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TH58B , TH58BYG

dokiman pou TH58BYG2S3HBAI6

Fich : TH58BYG2S3HBAI6.pdf

pwodwi ki gen rapò pou TH58BYG2S3HBAI6 Toshiba Memory America, Inc.

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