NTD6600N-1G - MOSFET N-CH 100V 12A IPAK

Fabricant Nimewo Pati

NTD6600N-1G

Entèn Nimewo Pati

AX-NTD6600N-1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 12A IPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

5016 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NTD6600N-1G nan stock pou vann.

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Espesifikasyon pou NTD6600N-1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NTD6600N-1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 12A IPAK

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V

RD sou (Max) @ Id, Vgs : 146 mOhm @ 6A, 5V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.28W (Ta), 56.6W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I-PAK

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NTD , NTD66

dokiman pou NTD6600N-1G

Fich : NTD6600N-1G.pdf

pwodwi ki gen rapò pou NTD6600N-1G ON Semiconductor

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