PMR280UN,115 - MOSFET N-CH 20V 0.98A SOT416

Fabricant Nimewo Pati

PMR280UN,115

Entèn Nimewo Pati

AX-PMR280UN,115

Fabricant

NXP USA Inc.

Kout Deskripsyon

MOSFET N-CH 20V 0.98A SOT416

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

12152 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen PMR280UN,115 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PMR280UN,115

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PMR280UN,115

Fabricant : NXP USA Inc.

Deskripsyon : MOSFET N-CH 20V 0.98A SOT416

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 980mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 340 mOhm @ 200mA, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 0.89nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 45pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 530mW (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SC-75

Pake / Ka : SC-75, SOT-416

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PMR2 , PMR280

dokiman pou PMR280UN,115

Fich : PMR280UN,115.pdf

pwodwi ki gen rapò pou PMR280UN,115 NXP USA Inc.

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