RMPG06JHE3_A/53 - DIODE GPP 1A 600V 200NS MPG06

Fabricant Nimewo Pati

RMPG06JHE3_A/53

Entèn Nimewo Pati

AX-RMPG06JHE3_A/53

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GPP 1A 600V 200NS MPG06

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3690655 Pieces

referans pri

~~USD 0.07602~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RMPG06JHE3_A/53 nan stock pou vann.

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Espesifikasyon pou RMPG06JHE3_A/53

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RMPG06JHE3_A/53

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GPP 1A 600V 200NS MPG06

Seri : Automotive, AEC-Q101, Superectifier®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 200ns

Kouran - Fèy Reverse @ Vr : 5µA @ 600V

Kapasite @ Vr, F : 6.6pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : MPG06, Axial

Pake Aparèy Founisè : MPG06

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RMPG0 , RMPG06J

dokiman pou RMPG06JHE3_A/53

Fich : RMPG06JHE3_A/53.pdf

pwodwi ki gen rapò pou RMPG06JHE3_A/53 Vishay Semiconductor Diodes Division

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