SI2302DDS-T1-GE3 - MOSFET N-CHAN 20V SOT23

Fabricant Nimewo Pati

SI2302DDS-T1-GE3

Entèn Nimewo Pati

AX-SI2302DDS-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CHAN 20V SOT23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3014480 Pieces

referans pri

~~USD 0.093072~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI2302DDS-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI2302DDS-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI2302DDS-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CHAN 20V SOT23

Seri : TrenchFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.9A (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 57 mOhm @ 3.6A, 4.5V

Vgs (th) (Max) @ Id : 850mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 5.5nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 710mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-23-3 (TO-236)

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI230 , SI2302DD

dokiman pou SI2302DDS-T1-GE3

Fich : SI2302DDS-T1-GE3.pdf

pwodwi ki gen rapò pou SI2302DDS-T1-GE3 Vishay Siliconix

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