MBRD835LT4G - DIODE SCHOTTKY 35V 8A DPAK

Fabricant Nimewo Pati

MBRD835LT4G

Entèn Nimewo Pati

AX-MBRD835LT4G

Fabricant

ON Semiconductor

Kout Deskripsyon

DIODE SCHOTTKY 35V 8A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2135680 Pieces

referans pri

~~USD 0.13137~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBRD835LT4G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou MBRD835LT4G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MBRD835LT4G

Fabricant : ON Semiconductor

Deskripsyon : DIODE SCHOTTKY 35V 8A DPAK

Seri : SWITCHMODE™

Estati Pati : Active

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 35V

Kouran - Mwayèn Rèktifye (Io) : 8A

Voltage - Forward (Vf) (Max) @ Si : 510mV @ 8A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 1.4mA @ 35V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pake Aparèy Founisè : DPAK

Operating Tanperati - Junction : -65°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MBR , MBRD8

dokiman pou MBRD835LT4G

Fich : MBRD835LT4G.pdf

pwodwi ki gen rapò pou MBRD835LT4G ON Semiconductor

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