SIA425EDJ-T1-GE3 - MOSFET P-CH 20V 4.5A SC-70-6

Fabricant Nimewo Pati

SIA425EDJ-T1-GE3

Entèn Nimewo Pati

AX-SIA425EDJ-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET P-CH 20V 4.5A SC-70-6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

60545 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIA425EDJ-T1-GE3 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIA425EDJ-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIA425EDJ-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET P-CH 20V 4.5A SC-70-6

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 60 mOhm @ 4.2A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : -

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.9W (Ta), 15.6W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PowerPAK® SC-70-6 Single

Pake / Ka : PowerPAK® SC-70-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIA42 , SIA425ED

dokiman pou SIA425EDJ-T1-GE3

Fich : SIA425EDJ-T1-GE3.pdf

pwodwi ki gen rapò pou SIA425EDJ-T1-GE3 Vishay Siliconix

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