CSD19537Q3T - MOSFET N-CH 100V 50A 8VSON

Fabricant Nimewo Pati

CSD19537Q3T

Entèn Nimewo Pati

AX-CSD19537Q3T

Fabricant

Texas Instruments

Kout Deskripsyon

MOSFET N-CH 100V 50A 8VSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

557655 Pieces

referans pri

~~USD 0.503112~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen CSD19537Q3T nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CSD19537Q3T

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CSD19537Q3T

Fabricant : Texas Instruments

Deskripsyon : MOSFET N-CH 100V 50A 8VSON

Seri : NexFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 14.5 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 3.6V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1680pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.8W (Ta), 83W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-VSON (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CSD , CSD19

dokiman pou CSD19537Q3T

Fich : CSD19537Q3T.pdf

pwodwi ki gen rapò pou CSD19537Q3T Texas Instruments

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