VS-ETH3007THN3 - DIODE GEN PURP 650V 30A TO220AC

Fabricant Nimewo Pati

VS-ETH3007THN3

Entèn Nimewo Pati

AX-VS-ETH3007THN3

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 650V 30A TO220AC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

267200 Pieces

referans pri

~~USD 1.05~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VS-ETH3007THN3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou VS-ETH3007THN3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VS-ETH3007THN3

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 650V 30A TO220AC

Seri : Automotive, AEC-Q101, FRED Pt®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 650V

Kouran - Mwayèn Rèktifye (Io) : 30A

Voltage - Forward (Vf) (Max) @ Si : 2.1V @ 30A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 37ns

Kouran - Fèy Reverse @ Vr : 30µA @ 650V

Kapasite @ Vr, F : -

Mounting Kalite : Through Hole

Pake / Ka : TO-220-2

Pake Aparèy Founisè : TO-220AC

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VS-E , VS-ETH3

dokiman pou VS-ETH3007THN3

Fich : VS-ETH3007THN3.pdf

pwodwi ki gen rapò pou VS-ETH3007THN3 Vishay Semiconductor Diodes Division

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