SCTWA50N120 - MOSFET N-CH 1200V 65A HIP247

Fabricant Nimewo Pati

SCTWA50N120

Entèn Nimewo Pati

AX-SCTWA50N120

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET N-CH 1200V 65A HIP247

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

22778 Pieces

referans pri

~~USD 17.2386~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SCTWA50N120 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SCTWA50N120

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SCTWA50N120

Fabricant : STMicroelectronics

Deskripsyon : MOSFET N-CH 1200V 65A HIP247

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiCFET (Silicon Carbide)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 65A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 20V

RD sou (Max) @ Id, Vgs : 69 mOhm @ 40A, 20V

Vgs (th) (Max) @ Id : 3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 122nC @ 20V

Vgs (Max) : +25V, -10V

Antre kapasite (Ciss) (Max) @ Vds : 1900pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 318W (Tc)

Operating Tanperati : -55°C ~ 200°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : HiP247™

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SCT , SCTWA

dokiman pou SCTWA50N120

Fich : SCTWA50N120.pdf

pwodwi ki gen rapò pou SCTWA50N120 STMicroelectronics

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