SCTWA50N120 - MOSFET N-CH 1200V 65A HIP247
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-SCTWA50N120
Fabricant
Kout Deskripsyon
MOSFET N-CH 1200V 65A HIP247
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
22778 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SCTWA50N120 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou SCTWA50N120
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
SCTWA50N120
Fabricant :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 1200V 65A HIP247
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
65A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
69 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
122nC @ 20V
Vgs (Max) :
+25V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
1900pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
318W (Tc)
Operating Tanperati :
-55°C ~ 200°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
HiP247™
Pake / Ka :
TO-247-3
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou SCTWA50N120
Fich :
SCTWA50N120.pdf
pwodwi ki gen rapò pou SCTWA50N120 STMicroelectronics
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