MBRB735HE3_A/I - DIODE SCHOTTKY 35V 7.5A TO263AB

Fabricant Nimewo Pati

MBRB735HE3_A/I

Entèn Nimewo Pati

AX-MBRB735HE3_A/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE SCHOTTKY 35V 7.5A TO263AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

24367 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBRB735HE3_A/I nan stock pou vann.

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Espesifikasyon pou MBRB735HE3_A/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MBRB735HE3_A/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE SCHOTTKY 35V 7.5A TO263AB

Seri : Automotive, AEC-Q101

Estati Pati : Obsolete

Kalite dyòd : Schottky

Voltage - DC Ranvèse (Vr) (Max) : 35V

Kouran - Mwayèn Rèktifye (Io) : 7.5A

Voltage - Forward (Vf) (Max) @ Si : 840mV @ 15A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : -

Kouran - Fèy Reverse @ Vr : 100µA @ 35V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pake Aparèy Founisè : TO-263AB

Operating Tanperati - Junction : -65°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MBRB , MBRB735

dokiman pou MBRB735HE3_A/I

Fich : MBRB735HE3_A/I.pdf

pwodwi ki gen rapò pou MBRB735HE3_A/I Vishay Semiconductor Diodes Division

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