SI1012CR-T1-GE3 - MOSFET N-CH 20V 0.63A SC-75A

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 20V 0.63A SC-75A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
4087470 Pieces
referans pri
USD 0.06864
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI1012CR-T1-GE3 nan stock pou vann.
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Espesifikasyon pou SI1012CR-T1-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI1012CR-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 20V 0.63A SC-75A
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : -
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 396 mOhm @ 600mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 2nC @ 8V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 43pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 240mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-75A
Pake / Ka : SC-75, SOT-416
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI101 , SI1012C

dokiman pou SI1012CR-T1-GE3

pwodwi ki gen rapò pou SI1012CR-T1-GE3 Vishay Siliconix

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