FDMS1D4N03S - MOSFET N-CH 30V 211A 8PQFN

Fabricant Nimewo Pati

FDMS1D4N03S

Entèn Nimewo Pati

AX-FDMS1D4N03S

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 211A 8PQFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

470115 Pieces

referans pri

~~USD 0.59679~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDMS1D4N03S nan stock pou vann.

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Espesifikasyon pou FDMS1D4N03S

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDMS1D4N03S

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 30V 211A 8PQFN

Seri : PowerTrench®, SyncFET™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 211A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.09 mOhm @ 38A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 4.5V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 10250pF @ 15V

Karakteristik FET : Schottky Diode (Body)

Disipasyon Pouvwa (Max) : 74W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PQFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDM , FDMS1

dokiman pou FDMS1D4N03S

Fich : FDMS1D4N03S.pdf

pwodwi ki gen rapò pou FDMS1D4N03S ON Semiconductor

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