EGL34BHE3_A/H - DIODE GEN PURP 100V 500MA DO213
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE GEN PURP 100V 500MA DO213
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
3913680 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen EGL34BHE3_A/H nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou EGL34BHE3_A/H
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : EGL34BHE3_A/H
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 500MA DO213
Seri : Automotive, AEC-Q101, Superectifier®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 500mA
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 500mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 5µA @ 100V
Kapasite @ Vr, F : 7pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AA (Glass)
Pake Aparèy Founisè : DO-213AA (GL34)
Operating Tanperati - Junction : -65°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou EGL34BHE3_A/H
Fich : EGL34BHE3_A/H.pdf
pwodwi ki gen rapò pou EGL34BHE3_A/H Vishay Semiconductor Diodes Division
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| Vishay Beyschlag | CAP CER 100PF 16KV DISK. | ||
| Vishay Beyschlag | CAP CER 7500PF 22.5KV SCREW. | ||
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| EPCOS (TDK) | CAP CER 0.022UF 100V X7R RADIAL. | ||
| Vishay Beyschlag | CAP CER 100PF 16KV DISK. | ||
| Vishay Beyschlag | CAP CER 1500PF 30KV R85 AXIAL. | ||
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