E3M0120090D - E-SERIES 900V 120 MOHM G3 SIC

Fabricant Nimewo Pati

E3M0120090D

Entèn Nimewo Pati

AX-E3M0120090D

Fabricant

Cree/Wolfspeed

Kout Deskripsyon

E-SERIES 900V 120 MOHM G3 SIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

61520 Pieces

referans pri

~~USD 4.56~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen E3M0120090D nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou E3M0120090D

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : E3M0120090D

Fabricant : Cree/Wolfspeed

Deskripsyon : E-SERIES 900V 120 MOHM G3 SIC

Seri : Automotive, AEC-Q101, E

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : SiCFET (Silicon Carbide)

Drenaj nan Voltage Sous (Vdss) : 900V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 23A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 15V

RD sou (Max) @ Id, Vgs : 155 mOhm @ 15A, 15V

Vgs (th) (Max) @ Id : 3.5V @ 3mA

Chaje Gate (Qg) (Max) @ Vgs : 17.3nC @ 15V

Vgs (Max) : +18V, -8V

Antre kapasite (Ciss) (Max) @ Vds : 350pF @ 600V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 97W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247-3

Pake / Ka : TO-247-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : E3M , E3M01

dokiman pou E3M0120090D

Fich : E3M0120090D.pdf

pwodwi ki gen rapò pou E3M0120090D Cree/Wolfspeed

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