BUK6E2R0-30C,127 - MOSFET N-CH 30V 120A I2PAK

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 30V 120A I2PAK
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Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
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11152 Pieces
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AXE Semiconductor gen BUK6E2R0-30C,127 nan stock pou vann.
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Espesifikasyon pou BUK6E2R0-30C,127

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : BUK6E2R0-30C,127
Fabricant : Nexperia USA Inc.
Deskripsyon : MOSFET N-CH 30V 120A I2PAK
Seri : Automotive, AEC-Q101, TrenchMOS™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 2.2 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 229nC @ 10V
Vgs (Max) : ±16V
Antre kapasite (Ciss) (Max) @ Vds : 14964pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 306W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I2PAK
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : BUK6E , BUK6E2R0

dokiman pou BUK6E2R0-30C,127

pwodwi ki gen rapò pou BUK6E2R0-30C,127 Nexperia USA Inc.

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