RJK1003DPN-E0#T2 - MOSFET N-CH 100V 50A TO220

Fabricant Nimewo Pati

RJK1003DPN-E0#T2

Entèn Nimewo Pati

AX-RJK1003DPN-E0#T2

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 100V 50A TO220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

332010 Pieces

referans pri

~~USD 0.84504~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RJK1003DPN-E0#T2 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou RJK1003DPN-E0#T2

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RJK1003DPN-E0#T2

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 100V 50A TO220

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 50A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 11 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 59nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4150pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220AB

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RJK10 , RJK1003D

dokiman pou RJK1003DPN-E0#T2

Fich : RJK1003DPN-E0#T2.pdf

pwodwi ki gen rapò pou RJK1003DPN-E0#T2 Renesas Electronics America

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