BSB017N03LX3 G - MOSFET N-CH 30V 147A 2WDSON

Fabricant Nimewo Pati

BSB017N03LX3 G

Entèn Nimewo Pati

AX-BSB017N03LX3 G

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 147A 2WDSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

15776 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSB017N03LX3 G nan stock pou vann.

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Espesifikasyon pou BSB017N03LX3 G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSB017N03LX3 G

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 147A 2WDSON

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 32A (Ta), 147A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.7 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 102nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 7800pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.8W (Ta), 57W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : MG-WDSON-2, CanPAK M™

Pake / Ka : 3-WDSON

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSB0 , BSB017N

dokiman pou BSB017N03LX3 G

Fich : BSB017N03LX3 G.pdf

pwodwi ki gen rapò pou BSB017N03LX3 G Infineon Technologies

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