IDH04G65C6XKSA1 - DIODE SCHOTTKY 650V 12A TO220-2
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE SCHOTTKY 650V 12A TO220-2
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
207820 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IDH04G65C6XKSA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IDH04G65C6XKSA1
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IDH04G65C6XKSA1
Fabricant :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 650V 12A TO220-2
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
12A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.35V @ 4A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
14µA @ 420V
Kapasite @ Vr, F :
205pF @ 1V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
TO-220-2
Pake Aparèy Founisè :
PG-TO220-2
Operating Tanperati - Junction :
-55°C ~ 175°C
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou IDH04G65C6XKSA1
Fich :
IDH04G65C6XKSA1.pdf
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