IDH04G65C6XKSA1 - DIODE SCHOTTKY 650V 12A TO220-2

Fabricant Nimewo Pati

IDH04G65C6XKSA1

Entèn Nimewo Pati

AX-IDH04G65C6XKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

DIODE SCHOTTKY 650V 12A TO220-2

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

207820 Pieces

referans pri

~~USD 1.35~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IDH04G65C6XKSA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IDH04G65C6XKSA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IDH04G65C6XKSA1

Fabricant : Infineon Technologies

Deskripsyon : DIODE SCHOTTKY 650V 12A TO220-2

Seri : -

Estati Pati : Active

Kalite dyòd : Silicon Carbide Schottky

Voltage - DC Ranvèse (Vr) (Max) : 650V

Kouran - Mwayèn Rèktifye (Io) : 12A (DC)

Voltage - Forward (Vf) (Max) @ Si : 1.35V @ 4A

Vitès : No Recovery Time > 500mA (Io)

Ranvèse Tan Reverse (trr) : 0ns

Kouran - Fèy Reverse @ Vr : 14µA @ 420V

Kapasite @ Vr, F : 205pF @ 1V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : TO-220-2

Pake Aparèy Founisè : PG-TO220-2

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IDH04 , IDH04G6

dokiman pou IDH04G65C6XKSA1

Fich : IDH04G65C6XKSA1.pdf

pwodwi ki gen rapò pou IDH04G65C6XKSA1 Infineon Technologies

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