SM8S10HE3/2E - TVS DIODE 10V 18.8V DO218AB

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
TVS DIODE 10V 18.8V DO218AB
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9130 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SM8S10HE3/2E nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
MoneyGram

Espesifikasyon pou SM8S10HE3/2E

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SM8S10HE3/2E
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : TVS DIODE 10V 18.8V DO218AB
Seri : Automotive, AEC-Q101, PAR®
Estati Pati : Obsolete
Kalite : Zener
Chanèl Unidirèksyonèl : 1
Chanèl bidirèksyonèl yo : -
Voltage - Ranvèse kanpe (Tip) : 10V
Vòltaj - Dekonpozisyon (Min) : 11.1V
Voltage - blocage (Max) @ Ipp : 18.8V
Kouran - Pik batman (10 / 1000µs) : 351A
Pouvwa - Peak batman kè : 6600W (6.6kW)
Pwoteksyon Liy Pouvwa : No
Aplikasyon : Automotive
Kapasite @ frekans : -
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : DO-218AB
Pake Aparèy Founisè : DO-218AB
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SM8S , SM8S10

dokiman pou SM8S10HE3/2E

pwodwi ki gen rapò pou SM8S10HE3/2E Vishay Semiconductor Diodes Division

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