TPN4R712MD,L1Q - MOSFET P-CH 20V 36A 8TSON ADV

Fabricant Nimewo Pati

TPN4R712MD,L1Q

Entèn Nimewo Pati

AX-TPN4R712MD,L1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET P-CH 20V 36A 8TSON ADV

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1712845 Pieces

referans pri

~~USD 0.1638~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TPN4R712MD,L1Q nan stock pou vann.

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Espesifikasyon pou TPN4R712MD,L1Q

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TPN4R712MD,L1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET P-CH 20V 36A 8TSON ADV

Seri : U-MOSVI

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 36A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 4.7 mOhm @ 18A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 65nC @ 5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 4300pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 42W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TPN4 , TPN4R71

dokiman pou TPN4R712MD,L1Q

Fich : TPN4R712MD,L1Q.pdf

pwodwi ki gen rapò pou TPN4R712MD,L1Q Toshiba Semiconductor and Storage

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