IXDN602SI - MOSFET N-CH 2A DUAL LO SIDE 8-SO

Fabricant Nimewo Pati

IXDN602SI

Entèn Nimewo Pati

AX-IXDN602SI

Fabricant

IXYS Integrated Circuits Division

Kout Deskripsyon

MOSFET N-CH 2A DUAL LO SIDE 8-SO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

242945 Pieces

referans pri

~~USD 1.284~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXDN602SI nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXDN602SI

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXDN602SI

Fabricant : IXYS Integrated Circuits Division

Deskripsyon : MOSFET N-CH 2A DUAL LO SIDE 8-SO

Seri : -

Estati Pati : Active

Kondwi konte genyen : Low-Side

Kalite Chèn : Independent

Kantite Chofè yo : 2

Kalite Gate : IGBT, N-Channel, P-Channel MOSFET

Voltage - Pwovizyon pou : 4.5V ~ 35V

Vòltaj lojik - VIL, VIH : 0.8V, 3V

Kouran - Peak Sòti (Sous, Lavabo) : 2A, 2A

Kalite Antre : Non-Inverting

Segondè Voltage Side - Max (Bootstrap) : -

Rise / Fall Time (Tip) : 7.5ns, 6.5ns

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width) Exposed Pad

Pake Aparèy Founisè : 8-SOIC-EP

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXD , IXDN

dokiman pou IXDN602SI

Fich : IXDN602SI.pdf

pwodwi ki gen rapò pou IXDN602SI IXYS Integrated Circuits Division

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