PHKD13N03LT,518 - MOSFET 2N-CH 30V 10.4A 8SOIC

Fabricant Nimewo Pati

PHKD13N03LT,518

Entèn Nimewo Pati

AX-PHKD13N03LT,518

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET 2N-CH 30V 10.4A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

27440 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen PHKD13N03LT,518 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PHKD13N03LT,518

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PHKD13N03LT,518

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET 2N-CH 30V 10.4A 8SOIC

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.4A

RD sou (Max) @ Id, Vgs : 20 mOhm @ 8A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 10.7nC @ 5V

Antre kapasite (Ciss) (Max) @ Vds : 752pF @ 15V

Pouvwa - Max : 3.57W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SO

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PHKD1 , PHKD13N

dokiman pou PHKD13N03LT,518

Fich : PHKD13N03LT,518.pdf

pwodwi ki gen rapò pou PHKD13N03LT,518 Nexperia USA Inc.

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