IRLS4030-7PPBF - MOSFET N-CH 100V 190A D2PAK-7

Fabricant Nimewo Pati

IRLS4030-7PPBF

Entèn Nimewo Pati

AX-IRLS4030-7PPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 100V 190A D2PAK-7

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

51774 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRLS4030-7PPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRLS4030-7PPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRLS4030-7PPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 100V 190A D2PAK-7

Seri : HEXFET®

Estati Pati : Discontinued at Digi-Key

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 190A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.9 mOhm @ 110A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 140nC @ 4.5V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 11490pF @ 50V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 370W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK (7-Lead)

Pake / Ka : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRLS , IRLS403

dokiman pou IRLS4030-7PPBF

Fich : IRLS4030-7PPBF.pdf

pwodwi ki gen rapò pou IRLS4030-7PPBF Infineon Technologies

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