SI7909DN-T1-GE3 - MOSFET 2P-CH 12V 5.3A 1212-8

Fabricant Nimewo Pati

SI7909DN-T1-GE3

Entèn Nimewo Pati

AX-SI7909DN-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET 2P-CH 12V 5.3A 1212-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

27909 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI7909DN-T1-GE3 nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SI7909DN-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SI7909DN-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET 2P-CH 12V 5.3A 1212-8

Seri : TrenchFET®

Estati Pati : Obsolete

FET Kalite : 2 P-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.3A

RD sou (Max) @ Id, Vgs : 37 mOhm @ 7.7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 700µA

Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : -

Pouvwa - Max : 1.3W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : PowerPAK® 1212-8 Dual

Pake Aparèy Founisè : PowerPAK® 1212-8 Dual

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SI790 , SI7909D

dokiman pou SI7909DN-T1-GE3

Fich : SI7909DN-T1-GE3.pdf

pwodwi ki gen rapò pou SI7909DN-T1-GE3 Vishay Siliconix

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