TSM061NA03CV RGG - MOSFET N-CH 30V 66A 8PDFN

Fabricant Nimewo Pati

TSM061NA03CV RGG

Entèn Nimewo Pati

AX-TSM061NA03CV RGG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET N-CH 30V 66A 8PDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

973485 Pieces

referans pri

~~USD 0.288204~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen TSM061NA03CV RGG nan stock pou vann.

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Espesifikasyon pou TSM061NA03CV RGG

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TSM061NA03CV RGG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET N-CH 30V 66A 8PDFN

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 66A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 6.1 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 19.3nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1136pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 44.6W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PDFN (3x3)

Pake / Ka : 8-PowerWDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TSM06 , TSM061NA

dokiman pou TSM061NA03CV RGG

Fich : TSM061NA03CV RGG.pdf

pwodwi ki gen rapò pou TSM061NA03CV RGG Taiwan Semiconductor Corporation

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