FDFMA3P029Z - MOSFET P CH 30V 3.3A MICRO 2X2

Fabricant Nimewo Pati

FDFMA3P029Z

Entèn Nimewo Pati

AX-FDFMA3P029Z

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P CH 30V 3.3A MICRO 2X2

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

16808 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDFMA3P029Z nan stock pou vann.

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Espesifikasyon pou FDFMA3P029Z

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDFMA3P029Z

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P CH 30V 3.3A MICRO 2X2

Seri : PowerTrench®

Estati Pati : Discontinued at Digi-Key

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 87 mOhm @ 3.3A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 435pF @ 15V

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 1.4W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-MicroFET (2x2)

Pake / Ka : 6-VDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDF , FDFMA

dokiman pou FDFMA3P029Z

Fich : FDFMA3P029Z.pdf

pwodwi ki gen rapò pou FDFMA3P029Z ON Semiconductor

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