R6004JND3TL1 - MOSFET LOW ON-RESISTANCE AND FAS

Fabricant Nimewo Pati

R6004JND3TL1

Entèn Nimewo Pati

AX-R6004JND3TL1

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET LOW ON-RESISTANCE AND FAS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

637045 Pieces

referans pri

~~USD 0.440412~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen R6004JND3TL1 nan stock pou vann.

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Espesifikasyon pou R6004JND3TL1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : R6004JND3TL1

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET LOW ON-RESISTANCE AND FAS

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 15V

RD sou (Max) @ Id, Vgs : 1.43 Ohm @ 2A, 15V

Vgs (th) (Max) @ Id : 7V @ 450µA

Chaje Gate (Qg) (Max) @ Vgs : 10.5nC @ 15V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 260pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 60W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-252

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : R600 , R6004J

dokiman pou R6004JND3TL1

Fich : R6004JND3TL1.pdf

pwodwi ki gen rapò pou R6004JND3TL1 Rohm Semiconductor

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