SIZF906ADT-T1-GE3 - MOSFET DUAL N-CHAN 30V

Fabricant Nimewo Pati

SIZF906ADT-T1-GE3

Entèn Nimewo Pati

AX-SIZF906ADT-T1-GE3

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET DUAL N-CHAN 30V

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

612115 Pieces

referans pri

~~USD 0.458346~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIZF906ADT-T1-GE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SIZF906ADT-T1-GE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SIZF906ADT-T1-GE3

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET DUAL N-CHAN 30V

Seri : TrenchFET® Gen IV

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual), Schottky

Karakteristik FET : Standard

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 27A (Ta), 60A (Tc), 52A (Ta), 60A (Tc)

RD sou (Max) @ Id, Vgs : 3.8 mOhm @ 15A, 10V, 1.17 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 49nC @ 10V, 200nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 2000pF @ 15V, 8200pF @ 15V

Pouvwa - Max : 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-PowerWDFN

Pake Aparèy Founisè : 8-PowerPair® (6x5)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SIZF9 , SIZF906A

dokiman pou SIZF906ADT-T1-GE3

Fich : SIZF906ADT-T1-GE3.pdf

pwodwi ki gen rapò pou SIZF906ADT-T1-GE3 Vishay Siliconix

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