SI7942DP-T1-E3 - MOSFET 2N-CH 100V 3.8A PPAK SO-8

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 100V 3.8A PPAK SO-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
341730 Pieces
referans pri
USD 0.820998
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI7942DP-T1-E3 nan stock pou vann.
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Espesifikasyon pou SI7942DP-T1-E3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SI7942DP-T1-E3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 100V 3.8A PPAK SO-8
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.8A
RD sou (Max) @ Id, Vgs : 49 mOhm @ 5.9A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 24nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 1.4W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : PowerPAK® SO-8 Dual
Pake Aparèy Founisè : PowerPAK® SO-8 Dual
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SI79 , SI7942D

dokiman pou SI7942DP-T1-E3

pwodwi ki gen rapò pou SI7942DP-T1-E3 Vishay Siliconix

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