IPB023N04NGATMA1 - MOSFET N-CH 40V 90A TO263-3

Fabricant Nimewo Pati

IPB023N04NGATMA1

Entèn Nimewo Pati

AX-IPB023N04NGATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 40V 90A TO263-3

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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52284 Pieces

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~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPB023N04NGATMA1 nan stock pou vann.

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Espesifikasyon pou IPB023N04NGATMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPB023N04NGATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 40V 90A TO263-3

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 90A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.3 mOhm @ 90A, 10V

Vgs (th) (Max) @ Id : 4V @ 95µA

Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 10000pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 167W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPB02 , IPB023N0

dokiman pou IPB023N04NGATMA1

Fich : IPB023N04NGATMA1.pdf

pwodwi ki gen rapò pou IPB023N04NGATMA1 Infineon Technologies

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