AUIRFN7110TR - MOSFET NCH 100V 58A PQFN

Fabricant Nimewo Pati

AUIRFN7110TR

Entèn Nimewo Pati

AX-AUIRFN7110TR

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET NCH 100V 58A PQFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

23568 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen AUIRFN7110TR nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou AUIRFN7110TR

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : AUIRFN7110TR

Fabricant : Infineon Technologies

Deskripsyon : MOSFET NCH 100V 58A PQFN

Seri : Automotive, AEC-Q101, HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 14.5 mOhm @ 35A, 10V

Vgs (th) (Max) @ Id : 4V @ 100µA

Chaje Gate (Qg) (Max) @ Vgs : 74nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3050pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 4.3W (Ta), 125W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PQFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : AUIR , AUIRFN

dokiman pou AUIRFN7110TR

Fich : AUIRFN7110TR.pdf

pwodwi ki gen rapò pou AUIRFN7110TR Infineon Technologies

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