CSD23202W10T - MOSFET P-CH 12V 2.2A 4DSBGA

Fabricant Nimewo Pati

CSD23202W10T

Entèn Nimewo Pati

AX-CSD23202W10T

Fabricant

Texas Instruments

Kout Deskripsyon

MOSFET P-CH 12V 2.2A 4DSBGA

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1664550 Pieces

referans pri

~~USD 0.168552~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen CSD23202W10T nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou CSD23202W10T

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : CSD23202W10T

Fabricant : Texas Instruments

Deskripsyon : MOSFET P-CH 12V 2.2A 4DSBGA

Seri : NexFET™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 12V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V

RD sou (Max) @ Id, Vgs : 53 mOhm @ 500mA, 4.5V

Vgs (th) (Max) @ Id : 900mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 3.8nC @ 4.5V

Vgs (Max) : -6V

Antre kapasite (Ciss) (Max) @ Vds : 512pF @ 6V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 4-DSBGA (1x1)

Pake / Ka : 4-UFBGA, DSBGA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : CSD2 , CSD232

dokiman pou CSD23202W10T

Fich : CSD23202W10T.pdf

pwodwi ki gen rapò pou CSD23202W10T Texas Instruments

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