PHKD3NQ10T,518 - MOSFET 2N-CH 100V 3A 8SOIC

Fabricant Nimewo Pati

PHKD3NQ10T,518

Entèn Nimewo Pati

AX-PHKD3NQ10T,518

Fabricant

Nexperia USA Inc.

Kout Deskripsyon

MOSFET 2N-CH 100V 3A 8SOIC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

29029 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen PHKD3NQ10T,518 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou PHKD3NQ10T,518

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : PHKD3NQ10T,518

Fabricant : Nexperia USA Inc.

Deskripsyon : MOSFET 2N-CH 100V 3A 8SOIC

Seri : TrenchMOS™

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A

RD sou (Max) @ Id, Vgs : 90 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V

Antre kapasite (Ciss) (Max) @ Vds : 633pF @ 20V

Pouvwa - Max : 2W

Operating Tanperati : -65°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pake Aparèy Founisè : 8-SO

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : PHKD , PHKD3NQ

dokiman pou PHKD3NQ10T,518

Fich : PHKD3NQ10T,518.pdf

pwodwi ki gen rapò pou PHKD3NQ10T,518 Nexperia USA Inc.

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