IRLHS6376TR2PBF - MOSFET 2N-CH 30V 3.6A PQFN

Fabricant Nimewo Pati

IRLHS6376TR2PBF

Entèn Nimewo Pati

AX-IRLHS6376TR2PBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET 2N-CH 30V 3.6A PQFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

27951 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRLHS6376TR2PBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRLHS6376TR2PBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRLHS6376TR2PBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET 2N-CH 30V 3.6A PQFN

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Logic Level Gate

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.6A

RD sou (Max) @ Id, Vgs : 63 mOhm @ 3.4A, 4.5V

Vgs (th) (Max) @ Id : 1.1V @ 10µA

Chaje Gate (Qg) (Max) @ Vgs : 2.8nC @ 4.5V

Antre kapasite (Ciss) (Max) @ Vds : 270pF @ 25V

Pouvwa - Max : 1.5W

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake / Ka : 6-VDFN Exposed Pad

Pake Aparèy Founisè : 6-PQFN (2x2)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRLHS , IRLHS63

dokiman pou IRLHS6376TR2PBF

Fich : IRLHS6376TR2PBF.pdf

pwodwi ki gen rapò pou IRLHS6376TR2PBF Infineon Technologies

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