IPSA70R1K4P7SAKMA1 - MOSFET COOLMOS 700V TO251-3

Fabricant Nimewo Pati

IPSA70R1K4P7SAKMA1

Entèn Nimewo Pati

AX-IPSA70R1K4P7SAKMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET COOLMOS 700V TO251-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

631900 Pieces

referans pri

~~USD 0.444~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPSA70R1K4P7SAKMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IPSA70R1K4P7SAKMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPSA70R1K4P7SAKMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET COOLMOS 700V TO251-3

Seri : CoolMOS™ P7

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 700V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 700mA, 10V

Vgs (th) (Max) @ Id : 3.5V @ 40µA

Chaje Gate (Qg) (Max) @ Vgs : 4.7nC @ 400V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 158pF @ 400V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 22.7W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO251-3

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPSA70 , IPSA70R1K

dokiman pou IPSA70R1K4P7SAKMA1

Fich : IPSA70R1K4P7SAKMA1.pdf

pwodwi ki gen rapò pou IPSA70R1K4P7SAKMA1 Infineon Technologies

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