BVSS123LT1G - MOSFET N-CH 100V 170MA SOT-23-3

Fabricant Nimewo Pati

BVSS123LT1G

Entèn Nimewo Pati

AX-BVSS123LT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 100V 170MA SOT-23-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4982485 Pieces

referans pri

~~USD 0.05631~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BVSS123LT1G nan stock pou vann.

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Espesifikasyon pou BVSS123LT1G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BVSS123LT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 100V 170MA SOT-23-3

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 170mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 6 Ohm @ 100mA, 10V

Vgs (th) (Max) @ Id : 2.8V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 20pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 225mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-23-3

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BVS , BVSS1

dokiman pou BVSS123LT1G

Fich : BVSS123LT1G.pdf

pwodwi ki gen rapò pou BVSS123LT1G ON Semiconductor

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