STR2P3LLH6 - MOSFET P-CH 30V 2A SOT-23

Fabricant Nimewo Pati

STR2P3LLH6

Entèn Nimewo Pati

AX-STR2P3LLH6

Fabricant

STMicroelectronics

Kout Deskripsyon

MOSFET P-CH 30V 2A SOT-23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3475595 Pieces

referans pri

~~USD 0.080724~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STR2P3LLH6 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou STR2P3LLH6

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : STR2P3LLH6

Fabricant : STMicroelectronics

Deskripsyon : MOSFET P-CH 30V 2A SOT-23

Seri : STripFET™ H6

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 56 mOhm @ 1A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 6nC @ 4.5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 639pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 350mW (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-23

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : STR , STR2P

dokiman pou STR2P3LLH6

Fich : STR2P3LLH6.pdf

pwodwi ki gen rapò pou STR2P3LLH6 STMicroelectronics

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