SIA445EDJ-T1-GE3 - MOSFET P-CH 20V 12A SC-70

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Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 20V 12A SC-70
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1702925 Pieces
referans pri
USD 0.164754
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIA445EDJ-T1-GE3 nan stock pou vann.
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Espesifikasyon pou SIA445EDJ-T1-GE3

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SIA445EDJ-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET P-CH 20V 12A SC-70
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 16.5 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 72nC @ 10V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 2130pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.5W (Ta), 19W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SC-70-6 Single
Pake / Ka : PowerPAK® SC-70-6
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SIA44 , SIA445ED

dokiman pou SIA445EDJ-T1-GE3

pwodwi ki gen rapò pou SIA445EDJ-T1-GE3 Vishay Siliconix

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