IXFN80N60P3 - MOSFET N-CH 600V 66A SOT-227B

Fabricant Nimewo Pati

IXFN80N60P3

Entèn Nimewo Pati

AX-IXFN80N60P3

Fabricant

IXYS

Kout Deskripsyon

MOSFET N-CH 600V 66A SOT-227B

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

30870 Pieces

referans pri

~~USD 12.72~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IXFN80N60P3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IXFN80N60P3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IXFN80N60P3

Fabricant : IXYS

Deskripsyon : MOSFET N-CH 600V 66A SOT-227B

Seri : HiPerFET™, Polar3™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 66A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 70 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 5V @ 8mA

Chaje Gate (Qg) (Max) @ Vgs : 190nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 13100pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 960W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake Aparèy Founisè : SOT-227B

Pake / Ka : SOT-227-4, miniBLOC

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IXF , IXFN8

dokiman pou IXFN80N60P3

Fich : IXFN80N60P3.pdf

pwodwi ki gen rapò pou IXFN80N60P3 IXYS

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