IPB12CNE8N G - MOSFET N-CH 85V 67A TO263-3

Fabricant Nimewo Pati

IPB12CNE8N G

Entèn Nimewo Pati

AX-IPB12CNE8N G

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 85V 67A TO263-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

8208 Pieces

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~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IPB12CNE8N G nan stock pou vann.

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Espesifikasyon pou IPB12CNE8N G

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IPB12CNE8N G

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 85V 67A TO263-3

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 85V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 67A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 12.9 mOhm @ 67A, 10V

Vgs (th) (Max) @ Id : 4V @ 83µA

Chaje Gate (Qg) (Max) @ Vgs : 64nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4340pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK (TO-263AB)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IPB1 , IPB12C

dokiman pou IPB12CNE8N G

Fich : IPB12CNE8N G.pdf

pwodwi ki gen rapò pou IPB12CNE8N G Infineon Technologies

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